Design of class E power amplifiers by using scalable electro-thermal GaN HEMT model
نویسندگان
چکیده
منابع مشابه
Design of class E power amplifiers by using scalable electro-thermal GaN HEMT model
In this paper, a scalable large signal GaN HEMT model including nonlinear thermal sub-circuit is described. Only two scalable parameters are needed in the Ids scalable model by introducing a simple correction factor. The established model can predict the I–V curves at different-in-size AlGaN/GaN HEMTs devices accurately. Small signal S-parameters and large signal load pull tests with on-wafer m...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2017
ISSN: 1349-2543
DOI: 10.1587/elex.14.20170806